N-channel Silicon Power MOSFET featuring 100V drain-source voltage and 61A continuous drain current. This single-element HEXFET technology device operates in enhancement mode with a maximum gate threshold voltage of 4V. It is housed in a surface-mount D2PAK (TO-263AB) package with gull-wing leads, offering a 3-pin configuration and a maximum power dissipation of 140W. The component boasts a low drain-source on-resistance of 13.9 mOhm at 10V.
PackageD2PAK
MountingSurface Mount
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Technical Specifications
Infineon IRFS4510PBF technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
TO-263
Package/Case
D2PAK
Package Description
Double Deca Watt Package
Lead Shape
Gull-wing
Pin Count
3
PCB
2
Tab
Tab
Package Length (mm)
10.67(Max)
Package Width (mm)
9.65(Max)
Package Height (mm)
4.83(Max)
Seated Plane Height (mm)
5.08(Max)
Pin Pitch (mm)
2.54
Package Material
Plastic
Mounting
Surface Mount
Jedec
TO-263AB
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Process Technology
HEXFET
Maximum Drain Source Voltage
100V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
61A
Material
Si
Maximum Gate Threshold Voltage
4V
Maximum Drain Source Resistance
13.9@10VmOhm
Typical Gate Charge @ Vgs
58@10VnC
Typical Gate Charge @ 10V
58nC
Typical Input Capacitance @ Vds
3180@50VpF
Maximum Power Dissipation
140000mW
Min Operating Temperature
-55°C
Max Operating Temperature
175°C
Compliance
Cage Code
CG091
EU RoHS
Yes with Exemption
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Infineon IRFS4510PBF Datasheet
Download the complete datasheet for Infineon IRFS4510PBF to view detailed technical specifications.
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