
N-channel Silicon Power MOSFET featuring 100V drain-source voltage and 61A continuous drain current. This single-element HEXFET technology device operates in enhancement mode with a maximum gate threshold voltage of 4V. It is housed in a surface-mount D2PAK (TO-263AB) package with gull-wing leads, offering a 3-pin configuration and a maximum power dissipation of 140W. The component boasts a low drain-source on-resistance of 13.9 mOhm at 10V.
Infineon IRFS4510PBF technical specifications.
| Basic Package Type | Lead-Frame SMT |
| Package Family Name | TO-263 |
| Package/Case | D2PAK |
| Package Description | Double Deca Watt Package |
| Lead Shape | Gull-wing |
| Pin Count | 3 |
| PCB | 2 |
| Tab | Tab |
| Package Length (mm) | 10.67(Max) |
| Package Width (mm) | 9.65(Max) |
| Package Height (mm) | 4.83(Max) |
| Seated Plane Height (mm) | 5.08(Max) |
| Pin Pitch (mm) | 2.54 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Jedec | TO-263AB |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Process Technology | HEXFET |
| Maximum Drain Source Voltage | 100V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 61A |
| Material | Si |
| Maximum Gate Threshold Voltage | 4V |
| Maximum Drain Source Resistance | 13.9@10VmOhm |
| Typical Gate Charge @ Vgs | 58@10VnC |
| Typical Gate Charge @ 10V | 58nC |
| Typical Input Capacitance @ Vds | 3180@50VpF |
| Maximum Power Dissipation | 140000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 175°C |
| Cage Code | CG091 |
| EU RoHS | Yes with Exemption |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Download the complete datasheet for Infineon IRFS4510PBF to view detailed technical specifications.
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