IRFS59N10DPBF

Power Field-Effect Transistor, 59A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3

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Infineon IRFS59N10DPBF technical specifications.

Max Operating Temperature

175

Number of Terminals

Terminal Position

SINGLE

Number of Elements

RoHS

Yes

Eccn Code

EAR99

REACH

not_compliant

Military Spec

False

This datasheet cannot be embedded due to technical restrictions.