N-Channel Power MOSFET featuring a continuous drain current of 51A and a drain-source voltage of 55V. This silicon Metal-Oxide-Semiconductor Field-Effect Transistor offers a low on-resistance of 0.0139 ohms. Designed with a single element and packaged in a TO-263AB (D2PAK-3) plastic housing, it operates up to a maximum temperature of 175°C.
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Technical Specifications
Infineon IRFZ44ZSTRRPBF technical specifications.
General
| Max Operating Temperature | 175 |
| Number of Terminals | 2 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-263AB |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | not_compliant |
| Military Spec | False |
Datasheet
Infineon IRFZ44ZSTRRPBF Datasheet
Download the complete datasheet for Infineon IRFZ44ZSTRRPBF to view detailed technical specifications.
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