N-Channel Power MOSFET, 55V drain-source voltage, 39A continuous drain current, and 0.0165 ohm on-resistance. Features a single element silicon metal-oxide semiconductor field-effect transistor construction. Packaged in a TO-220AB plastic package with 3 terminals, operating up to a maximum temperature of 175°C.
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Technical Specifications
Infineon IRFZ46NPBF technical specifications.
General
Max Operating Temperature
175
Number of Terminals
3
Terminal Position
SINGLE
JEDEC Package Code
TO-220AB
Number of Elements
1
Compliance
RoHS
Yes
Eccn Code
EAR99
HTS Code
8541.29.00.95
REACH
Compliant
Military Spec
False
Datasheet
Infineon IRFZ46NPBF Datasheet
Download the complete datasheet for Infineon IRFZ46NPBF to view detailed technical specifications.
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