N-channel power MOSFET featuring 55V drain-source voltage and a continuous drain current of 64A. This single-element silicon Metal-oxide Semiconductor FET offers a low on-resistance of 0.014 ohms. Designed for high-power applications, it utilizes a lead-free, plastic D2PAK-3 package.
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Technical Specifications
Infineon IRFZ48NSTRLPBF technical specifications.
General
Number of Terminals
2
Terminal Position
SINGLE
Number of Elements
1
Compliance
RoHS
Yes
Eccn Code
EAR99
REACH
not_compliant
Military Spec
False
Datasheet
Infineon IRFZ48NSTRLPBF Datasheet
Download the complete datasheet for Infineon IRFZ48NSTRLPBF to view detailed technical specifications.
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