N-channel Insulated Gate Bipolar Transistor (IGBT) chip for through-hole mounting in a TO-247AC package. Features a maximum collector-emitter voltage of 1200V and a maximum continuous collector current of 30A. Offers a maximum power dissipation of 180000mW and a typical collector-emitter saturation voltage of 2.05V. Operates across a temperature range of -55°C to 150°C.
PackageTO-247AC
MountingThrough Hole
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Technical Specifications
Infineon IRG7PH30K10DPbF technical specifications.
General
Basic Package Type
Through Hole
Package Family Name
TO-247
Package/Case
TO-247AC
Package Description
Transistor Outline Package
Lead Shape
Through Hole
Pin Count
3
PCB
3
Tab
Tab
Package Length (mm)
15.87(Max)
Package Width (mm)
5.31(Max)
Package Height (mm)
20.7(Max)
Seated Plane Height (mm)
24.99(Max)
Pin Pitch (mm)
5.45
Package Material
Plastic
Mounting
Through Hole
Jedec
TO-247AC
Channel Type
N
Configuration
Single
Maximum Collector-Emitter Voltage
1200V
Maximum Gate Emitter Voltage
±30V
Maximum Continuous Collector Current
30A
Maximum Power Dissipation
180000mW
Typical Collector Emitter Saturation Voltage
2.05V
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
CG091
EU RoHS
Yes
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Infineon IRG7PH30K10DPbF Datasheet
Download the complete datasheet for Infineon IRG7PH30K10DPbF to view detailed technical specifications.
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