N-channel Insulated Gate Bipolar Transistor (IGBT) for high-voltage applications. Features a 1200V collector-emitter voltage and 90A continuous collector current. This single-configuration IGBT offers a maximum power dissipation of 385000mW and a typical collector-emitter saturation voltage of 1.7V. Housed in a TO-247AC package with through-hole mounting, it operates across a wide temperature range from -55°C to 175°C.
PackageTO-247AC
MountingThrough Hole
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Technical Specifications
Infineon IRG7PH42UPBF technical specifications.
General
Basic Package Type
Through Hole
Package Family Name
TO-247
Package/Case
TO-247AC
Package Description
Transistor Outline Package
Lead Shape
Through Hole
Pin Count
3
PCB
3
Tab
Tab
Package Length (mm)
15.87(Max)
Package Width (mm)
5.31(Max)
Package Height (mm)
20.7(Max)
Seated Plane Height (mm)
24.99(Max)
Pin Pitch (mm)
5.45
Package Material
Plastic
Mounting
Through Hole
Jedec
TO-247AC
Channel Type
N
Configuration
Single
Maximum Collector-Emitter Voltage
1200V
Maximum Gate Emitter Voltage
±30V
Maximum Continuous Collector Current
90A
Maximum Power Dissipation
385000mW
Typical Collector Emitter Saturation Voltage
1.7V
Min Operating Temperature
-55°C
Max Operating Temperature
175°C
Compliance
Cage Code
CG091
EU RoHS
Yes
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Infineon IRG7PH42UPBF Datasheet
Download the complete datasheet for Infineon IRG7PH42UPBF to view detailed technical specifications.
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