N-channel Insulated Gate Bipolar Transistor (IGBT) chip for through-hole mounting in a TO-247AD package. Features a 600V collector-emitter voltage, 96A continuous collector current, and 330W maximum power dissipation. Operates across a wide temperature range from -55°C to 175°C, with a typical collector-emitter saturation voltage of 1.65V. The 3-pin configuration includes a tab for enhanced thermal management.
PackageTO-247AD
MountingThrough Hole
Quick Jump:
Technical Specifications
Infineon IRGP4063-EPbF technical specifications.
General
Basic Package Type
Through Hole
Package Family Name
TO-247
Package/Case
TO-247AD
Package Description
Transistor Outline Package
Lead Shape
Through Hole
Pin Count
3
PCB
3
Tab
Tab
Package Length (mm)
15.87(Max)
Package Width (mm)
5.31(Max)
Package Height (mm)
20.7(Max)
Seated Plane Height (mm)
24.99(Max)
Pin Pitch (mm)
5.45
Package Material
Plastic
Mounting
Through Hole
Jedec
TO-247AD
Channel Type
N
Configuration
Single
Maximum Collector-Emitter Voltage
600V
Maximum Gate Emitter Voltage
±20V
Maximum Continuous Collector Current
96A
Maximum Power Dissipation
330000mW
Typical Collector Emitter Saturation Voltage
1.65V
Min Operating Temperature
-55°C
Max Operating Temperature
175°C
Compliance
Cage Code
CG091
EU RoHS
Yes
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Infineon IRGP4063-EPbF Datasheet
Download the complete datasheet for Infineon IRGP4063-EPbF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.