N-channel enhancement mode power MOSFET, 100V drain-source voltage, 45A continuous drain current. Features low on-resistance of 13mΩ at 12V Vgs, typical gate charge of 160nC at 12V, and input capacitance of 6270pF at 25V Vds. Housed in a TO-254AA through-hole package with 3 pins and a tab, offering a maximum power dissipation of 208W. Operates across a temperature range of -55°C to 150°C.
PackageTO-254AA
MountingThrough Hole
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Technical Specifications
Infineon IRHMK53160 technical specifications.
General
| Basic Package Type | Through Hole |
| Package Family Name | TO-254-AA |
| Package/Case | TO-254AA |
| Package Description | Transistor Outline Package |
| Lead Shape | Through Hole |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 13.84(Max) |
| Package Width (mm) | 6.6(Max) |
| Package Height (mm) | 13.84(Max) |
| Pin Pitch (mm) | 3.81 |
| Mounting | Through Hole |
| Jedec | TO-254AA |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 100V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 45A |
| Maximum Drain Source Resistance | 13@12VmOhm |
| Typical Gate Charge @ Vgs | 160(Max)@12VnC |
| Typical Input Capacitance @ Vds | 6270@25VpF |
| Maximum Power Dissipation | 208000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | CG091 |
| EU RoHS | No |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | Yes |
| Dose Level | 300 |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Infineon IRHMK53160 Datasheet
Download the complete datasheet for Infineon IRHMK53160 to view detailed technical specifications.
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