N-channel enhancement mode power MOSFET, featuring a 100V drain-source voltage and 45A continuous drain current. This single-element transistor is housed in a TO-254AA through-hole package with 3 pins and a tab. Key electrical characteristics include a maximum drain-source on-resistance of 13mΩ at 12V and a typical gate charge of 160nC at 12V. Operating temperature range spans from -55°C to 150°C.
PackageTO-254AA
MountingThrough Hole
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Technical Specifications
Infineon IRHMK58160 technical specifications.
General
| Basic Package Type | Through Hole |
| Package Family Name | TO-254-AA |
| Package/Case | TO-254AA |
| Package Description | Transistor Outline Package |
| Lead Shape | Through Hole |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 13.84(Max) |
| Package Width (mm) | 6.6(Max) |
| Package Height (mm) | 13.84(Max) |
| Pin Pitch (mm) | 3.81 |
| Mounting | Through Hole |
| Jedec | TO-254AA |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 100V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 45A |
| Maximum Drain Source Resistance | 13@12VmOhm |
| Typical Gate Charge @ Vgs | 160(Max)@12VnC |
| Typical Input Capacitance @ Vds | 6270@25VpF |
| Maximum Power Dissipation | 208000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | CG091 |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | 3A001.a.1.a |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | Yes |
| Dose Level | 1000 |
Datasheet
Infineon IRHMK58160 Datasheet
Download the complete datasheet for Infineon IRHMK58160 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.