IRL2505PBF

N-Channel Power MOSFET, designed for high-current applications. Features a continuous drain current (I(D)) of 104A and a drain-source voltage (V(DS)) of 55V. Offers a low on-resistance (R(DS(on))) of 0.01 ohm, ensuring efficient power transfer. This single-element silicon device utilizes a Metal-Oxide Semiconductor Field-Effect Transistor structure. Packaged in a TO-220AB lead-free package with 3 terminals, it operates up to a maximum temperature of 175°C.