IRL2505STRLPBF

N-Channel Power MOSFET, 104A continuous drain current, 55V drain-source voltage, and 0.01 ohm drain-source on-resistance. This single-element silicon Metal-oxide Semiconductor FET features a 3-pin D2PAK plastic package (TO-263AB) for efficient thermal management. Designed with a single terminal position, it offers robust performance for power switching applications.