N-Channel Power MOSFET featuring 100V drain-source voltage and 36A continuous drain current. This single-element silicon Metal-oxide Semiconductor FET offers a low on-resistance of 0.053 ohms. Designed for high-power applications, it is housed in a lead-free plastic D2PAK-3 package.
Infineon IRL540NSTRLPBF technical specifications.
| Number of Terminals | 2 |
| Terminal Position | SINGLE |
| Number of Elements | 1 |
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | not_compliant |
| Military Spec | False |
Download the complete datasheet for Infineon IRL540NSTRLPBF to view detailed technical specifications.
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