N-Channel Power MOSFET featuring a low on-resistance of 0.0024 ohms and a continuous drain current capability of 195A. This silicon Metal-Oxide Semiconductor Field-Effect Transistor operates up to a maximum temperature of 175°C and supports a drain-source voltage of 60V. The single-element transistor is housed in a TO-220AB package with 3 terminals.
Quick Jump:
Technical Specifications
Infineon IRLB3036PBF technical specifications.
General
| Max Operating Temperature | 175 |
| Number of Terminals | 3 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-220AB |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Infineon IRLB3036PBF Datasheet
Download the complete datasheet for Infineon IRLB3036PBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.