IRLB3813PBF

N-Channel Power MOSFET, 120A continuous drain current, 30V drain-source voltage, and 0.00195 ohm Rds(on). This single-element silicon Metal-Oxide Semiconductor Field-Effect Transistor features a maximum operating temperature of 175°C. Packaged in a TO-220AB plastic housing with three terminals, it is designed for lead-free applications.