N-channel Silicon Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET) designed for power applications. Features a continuous drain current (I(D)) of 21A and a maximum drain-source voltage (V(DS)) of 30V. Offers a low on-resistance of 0.0045 ohms. This single-element device operates up to a maximum temperature of 150°C and is housed in a compact 3.30 x 3.30 mm QFN-8 plastic package with 5 terminals. It is halogen-free and RoHS compliant.
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Technical Specifications
Infineon IRLHM630TRPBF technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 5 |
| Terminal Position | DUAL |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Infineon IRLHM630TRPBF Datasheet
Download the complete datasheet for Infineon IRLHM630TRPBF to view detailed technical specifications.
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