IRLHS6376TRPBF

N-channel silicon Metal-oxide Semiconductor FET (MOSFET) with 3.6A drain current and 30V drain-source voltage. Features a 2-element configuration within a 6-terminal, 2x2mm plastic QFN package. Designed for small signal applications, operating up to a maximum temperature of 150°C. This component is halogen-free and RoHS compliant.