IRLL024ZTRPBF

N-Channel Power MOSFET, 5A continuous drain current (I(D)) and 55V drain-source voltage (V(DS)). Features a low on-resistance of 0.1 ohm. This single-element silicon Metal-Oxide-Semiconductor Field-Effect Transistor is housed in a 4-terminal TO-261AA package with dual terminal positions. Designed with a lead-free package.