N-channel power MOSFET featuring 55V drain-source voltage and 5.2A continuous drain current. This single-element silicon Metal-Oxide-Semiconductor Field-Effect Transistor offers a low on-resistance of 0.051 ohms. Encased in a TO-261AA (SOT-223) package, it utilizes a 3-pin configuration with dual terminal positions.
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Technical Specifications
Infineon IRLL2705TRPBF technical specifications.
General
| Number of Terminals | 4 |
| Terminal Position | DUAL |
| JEDEC Package Code | TO-261AA |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | not_compliant |
| Military Spec | False |
Datasheet
Infineon IRLL2705TRPBF Datasheet
Download the complete datasheet for Infineon IRLL2705TRPBF to view detailed technical specifications.
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