N-Channel Silicon Metal-Oxide Semiconductor Field-Effect Transistor designed for small signal applications. Features a continuous drain current of 1.2A and a drain-source voltage of 30V. This single-element device operates across a temperature range of -55°C to 150°C. Housed in a 3-terminal TO-236AB (MICRO3) package, it offers dual terminal positioning.
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Technical Specifications
Infineon IRLML2803TRPBF technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 3 |
| Min Operating Temperature | -55 |
| Terminal Position | DUAL |
| JEDEC Package Code | TO-236AB |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| HTS Code | 8541.21.00.95 |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Infineon IRLML2803TRPBF Datasheet
Download the complete datasheet for Infineon IRLML2803TRPBF to view detailed technical specifications.
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