P-Channel Power MOSFET, featuring a low on-resistance of 0.05 ohms and a continuous drain current capability of 4.3A. This silicon Metal-oxide Semiconductor Field-Effect Transistor operates up to a maximum temperature of 150°C and supports a drain-source voltage of 12V. The component is housed in a 3-terminal TO-236AB (MICRO-3) package with dual terminal positions and a single element configuration.
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Technical Specifications
Infineon IRLML6401TRPBF technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 3 |
| Terminal Position | DUAL |
| JEDEC Package Code | TO-236AB |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Infineon IRLML6401TRPBF Datasheet
Download the complete datasheet for Infineon IRLML6401TRPBF to view detailed technical specifications.
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