N-channel power MOSFET featuring a continuous drain current of 28A and a drain-source voltage of 55V. This silicon metal-oxide semiconductor field-effect transistor offers a low on-resistance of 0.051 ohms. Designed with a single element and housed in a TO-252AA plastic package, it operates up to a maximum temperature of 175°C.
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Technical Specifications
Infineon IRLR2705TRPBF technical specifications.
General
Max Operating Temperature
175
Number of Terminals
2
Terminal Position
SINGLE
JEDEC Package Code
TO-252AA
Number of Elements
1
Compliance
RoHS
Yes
Eccn Code
EAR99
REACH
not_compliant
Military Spec
False
Datasheet
Infineon IRLR2705TRPBF Datasheet
Download the complete datasheet for Infineon IRLR2705TRPBF to view detailed technical specifications.
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