N-Channel Power MOSFET featuring a low on-resistance of 0.03 ohms and a continuous drain current capability of 20A. This single-element silicon device operates with a maximum drain-source voltage of 55V and a maximum operating temperature of 175°C. Packaged in a TO-252AA (DPAK-3) surface-mount package, it utilizes a metal-oxide semiconductor field-effect transistor construction.
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Technical Specifications
Infineon IRLR2905TRPBF technical specifications.
General
| Max Operating Temperature | 175 |
| Number of Terminals | 2 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-252AA |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | not_compliant |
| Military Spec | False |
Datasheet
Infineon IRLR2905TRPBF Datasheet
Download the complete datasheet for Infineon IRLR2905TRPBF to view detailed technical specifications.
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