N-Channel Power MOSFET featuring 100V drain-source voltage and 42A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low on-resistance of 0.014 ohms. Designed with a single element and TO-252AA package, it operates up to a maximum temperature of 175°C.
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Technical Specifications
Infineon IRLR3110ZTRLPBF technical specifications.
General
Max Operating Temperature
175
Number of Terminals
2
Terminal Position
SINGLE
JEDEC Package Code
TO-252AA
Number of Elements
1
Compliance
RoHS
Yes
Eccn Code
EAR99
REACH
not_compliant
Military Spec
False
Datasheet
Infineon IRLR3110ZTRLPBF Datasheet
Download the complete datasheet for Infineon IRLR3110ZTRLPBF to view detailed technical specifications.
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