N-channel silicon power MOSFET featuring 100V drain-source voltage and 63A continuous drain current. Designed for high-efficiency switching applications, this device offers a maximum operating temperature of 175°C. It is housed in a TO-252AA (DPAK) package with a 3-pin configuration (2+Tab) and a single terminal position for the gate.
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Technical Specifications
Infineon IRLR3110ZTRPBF technical specifications.
General
| Max Operating Temperature | 175 |
| Number of Terminals | 2 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-252AA |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| HTS Code | 8541.29.00.95 |
| REACH | not_compliant |
| Military Spec | False |
Datasheet
Infineon IRLR3110ZTRPBF Datasheet
Download the complete datasheet for Infineon IRLR3110ZTRPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.