N-Channel Power MOSFET featuring 100V drain-source voltage and 17A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low on-resistance of 0.125 ohms. Designed with a single element and TO-252AA package, it operates across a wide temperature range from -55°C to 175°C.
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Technical Specifications
Infineon IRLR3410TRPBF technical specifications.
General
| Max Operating Temperature | 175 |
| Number of Terminals | 2 |
| Min Operating Temperature | -55 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-252AA |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Infineon IRLR3410TRPBF Datasheet
Download the complete datasheet for Infineon IRLR3410TRPBF to view detailed technical specifications.
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