N-Channel Power MOSFET, featuring a low on-resistance of 0.0083 ohms and a continuous drain current capability of 50A. This silicon, metal-oxide semiconductor field-effect transistor operates at a drain-source voltage of 60V. It is housed in a TO-252AA (DPAK-3/2) package, offering a single element configuration with two terminals.
Quick Jump:
Technical Specifications
Infineon IRLR3636TRPBF technical specifications.
General
| Number of Terminals | 2 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-252AA |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Infineon IRLR3636TRPBF Datasheet
Download the complete datasheet for Infineon IRLR3636TRPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.