N-Channel Power MOSFET featuring 55V drain-source voltage and 18A continuous drain current. Offers a low on-resistance of 0.075 ohms. This single-element silicon Metal-Oxide-Semiconductor Field-Effect Transistor is housed in a TO-263AB plastic package with lead-free termination.
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Technical Specifications
Infineon IRLZ24NSTRLPBF technical specifications.
General
Number of Terminals
2
Terminal Position
SINGLE
JEDEC Package Code
TO-263AB
Number of Elements
1
Compliance
RoHS
Yes
Eccn Code
EAR99
REACH
not_compliant
Military Spec
False
Datasheet
Infineon IRLZ24NSTRLPBF Datasheet
Download the complete datasheet for Infineon IRLZ24NSTRLPBF to view detailed technical specifications.
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