N-Channel Power MOSFET featuring 55V drain-source voltage and 18A continuous drain current. Offers a low on-resistance of 0.075 ohms. This single-element silicon Metal-Oxide-Semiconductor Field-Effect Transistor is housed in a TO-263AB plastic package with lead-free termination.
Quick Jump:
Technical Specifications
Infineon IRLZ24NSTRLPBF technical specifications.
General
| Number of Terminals | 2 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-263AB |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | not_compliant |
| Military Spec | False |
Datasheet
Infineon IRLZ24NSTRLPBF Datasheet
Download the complete datasheet for Infineon IRLZ24NSTRLPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.