N-Channel Power MOSFET featuring 55V drain-source voltage and 47A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low on-resistance of 0.025 ohms. Designed with a single element and three terminals, it operates across a wide temperature range from -55°C to 175°C. The component utilizes a TO-220AB package for efficient thermal management.
Quick Jump:
Technical Specifications
Infineon IRLZ44NPBF technical specifications.
General
Max Operating Temperature
175
Number of Terminals
3
Min Operating Temperature
-55
Terminal Position
SINGLE
JEDEC Package Code
TO-220AB
Number of Elements
1
Compliance
RoHS
Yes
Eccn Code
EAR99
REACH
Compliant
Military Spec
False
Datasheet
Infineon IRLZ44NPBF Datasheet
Download the complete datasheet for Infineon IRLZ44NPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.