N-channel LDMOS RF power transistor designed for high-frequency applications. Features a 65V drain-to-source breakdown voltage and a maximum operating frequency of 1.99GHz. Offers 19dB gain and 10W output power with a continuous drain current of 1uA. Surface mount device with 58W power dissipation, operating from -40°C to 200°C. Lead-free and RoHS compliant, supplied in tape and reel packaging.
Frequency1.99GHz
Voltage Rating65V
Current Rating1uA
MountingSurface Mount
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Technical Specifications
Infineon PTF180101SV1 technical specifications.
General
| Continuous Drain Current (ID) | 1uA |
| Current Rating | 1uA |
| Drain to Source Breakdown Voltage | 65V |
| Drain to Source Resistance | 830mR |
| Drain to Source Voltage (Vdss) | 65V |
| Frequency | 1.99GHz |
| Gain | 19dB |
| Gate to Source Voltage (Vgs) | 12V |
| Lead Free | Lead Free |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 58W |
| Mount | Surface Mount |
| Output Power | 10W |
| Package Quantity | 500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 58W |
| RoHS Compliant | Yes |
| Series | GOLDMOS® |
| Technology | LDMOS |
| Test Voltage | 28V |
| Voltage Rating | 65V |
| DC Rated Voltage | 65V |
Compliance
| RoHS | Compliant |
Datasheet
Infineon PTF180101SV1 Datasheet
Download the complete datasheet for Infineon PTF180101SV1 to view detailed technical specifications.
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