Quick Jump:
Technical Specifications
Infineon PTF210451EV1 technical specifications.
General
| Continuous Drain Current (ID) | 1uA |
| Current Rating | 1uA |
| Drain to Source Breakdown Voltage | 65V |
| Drain to Source Resistance | 200mR |
| Drain to Source Voltage (Vdss) | 65V |
| Frequency | 2.17GHz |
| Gain | 14dB |
| Gate to Source Voltage (Vgs) | 12V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 175W |
| Output Power | 45W |
| Package Quantity | 50 |
| Packaging | Tray |
| Polarity | N-CHANNEL |
| Power Dissipation | 175W |
| Series | GOLDMOS® |
| Technology | LDMOS |
| Test Voltage | 28V |
| Voltage Rating | 65V |
Compliance
| RoHS | Compliant |
Datasheet
Infineon PTF210451EV1 Datasheet
Download the complete datasheet for Infineon PTF210451EV1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.