The PTF210451EV1 is a 65V N-CHANNEL power MOSFET from Infineon with a maximum operating temperature of 150°C and a minimum operating temperature of -40°C. It has a maximum power dissipation of 175W and an output power of 45W. The device is packaged in a tray with 50 units per package. It is part of the GOLDMOS series and utilizes LDMOS technology.
Frequency2.17GHz
Voltage Rating65V
Current Rating1uA
PolarityN-CHANNEL
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Technical Specifications
Infineon PTF210451EV1 technical specifications.
General
| Continuous Drain Current (ID) | 1uA |
| Current Rating | 1uA |
| Drain to Source Breakdown Voltage | 65V |
| Drain to Source Resistance | 200mR |
| Drain to Source Voltage (Vdss) | 65V |
| Frequency | 2.17GHz |
| Gain | 14dB |
| Gate to Source Voltage (Vgs) | 12V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 175W |
| Output Power | 45W |
| Package Quantity | 50 |
| Packaging | Tray |
| Polarity | N-CHANNEL |
| Power Dissipation | 175W |
| Series | GOLDMOS® |
| Technology | LDMOS |
| Test Voltage | 28V |
| Voltage Rating | 65V |
Compliance
| RoHS | Compliant |
Datasheet
Infineon PTF210451EV1 Datasheet
Download the complete datasheet for Infineon PTF210451EV1 to view detailed technical specifications.
No datasheet is available for this part.