N-channel LDMOS RF FET designed for high-frequency applications, featuring a 65V drain-to-source breakdown voltage and operating up to 2.68GHz. Delivers 10W output power with 16dB gain, and a low drain-to-source resistance of 830mR. This surface mount component offers a maximum power dissipation of 58W and operates across a wide temperature range from -40°C to 200°C. Packaged in tape and reel, it is lead-free and RoHS compliant.
Frequency2.68GHz
Voltage Rating65V
Current Rating1uA
MountingSurface Mount
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Technical Specifications
Infineon PTF240101SV1 technical specifications.
General
| Continuous Drain Current (ID) | 1uA |
| Current Rating | 1uA |
| Drain to Source Breakdown Voltage | 65V |
| Drain to Source Resistance | 830mR |
| Drain to Source Voltage (Vdss) | 65V |
| Frequency | 2.68GHz |
| Gain | 16dB |
| Gate to Source Voltage (Vgs) | 12V |
| Lead Free | Lead Free |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 58W |
| Mount | Surface Mount |
| Output Power | 10W |
| Package Quantity | 500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 58W |
| RoHS Compliant | Yes |
| Series | GOLDMOS® |
| Technology | LDMOS |
| Test Voltage | 28V |
| Voltage Rating | 65V |
| DC Rated Voltage | 65V |
Compliance
| RoHS | Compliant |
Datasheet
Infineon PTF240101SV1 Datasheet
Download the complete datasheet for Infineon PTF240101SV1 to view detailed technical specifications.
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