N-channel RF MOSFET transistor, single enhancement mode configuration, designed for surface mounting. Features a 10-pin SON EP package with exposed pad, measuring 4x4x1.42mm with a 0.65mm pin pitch. Operates with a maximum drain-source voltage of 65V, covering a frequency range from 700MHz to 2200MHz. Delivers 8W output power with a typical power gain of 20.7dB, supporting 2-Carrier W-CDMA, 2-Tone, and CW modes of operation. Suitable for applications within a wide temperature range of -65°C to 175°C.
PackageSON EP
MountingSurface Mount
Power8W
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Technical Specifications
Infineon PTFA220081MV4XUMA1 technical specifications.
General
| Basic Package Type | Non-Lead-Frame SMT |
| Package Family Name | SON |
| Package/Case | SON EP |
| Package Description | Small Outline No Lead Package, Exposed Pad |
| Lead Shape | No Lead |
| Pin Count | 10 |
| PCB | 10 |
| Package Length (mm) | 4 |
| Package Width (mm) | 4 |
| Package Height (mm) | 1.42 |
| Pin Pitch (mm) | 0.65 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Channel Type | N |
| Configuration | Single |
| Channel Mode | Enhancement |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 65V |
| Minimum Frequency | 700MHz |
| Maximum Frequency | 2200MHz |
| Min Operating Temperature | -65°C |
| Max Operating Temperature | 175°C |
| Mode of Operation | 2-Carrier W-CDMA|2-Tone|CW |
| Typical Power Gain | 20.7dB |
| Output Power | 8W |
Compliance
| Cage Code | CG091 |
| EU RoHS | Yes |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| RoHS Versions | 2011/65/EU |
Datasheet
Infineon PTFA220081MV4XUMA1 Datasheet
Download the complete datasheet for Infineon PTFA220081MV4XUMA1 to view detailed technical specifications.
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