P-channel MOSFET, 240V drain-source voltage, 0.2A continuous drain current. Features a SOT-223 (TO-261AA) surface-mount plastic package with gull-wing leads, 4 pins (3+tab), and a 2.3mm pin pitch. SIPMOS process technology enables enhancement mode operation with a maximum gate-source voltage of ±20V and 20000 mOhm drain-source resistance at 10V.
PackageSOT-223
MountingSurface Mount
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Technical Specifications
Infineon Q62702-S653 technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
SOT
Package/Case
SOT-223
Package Description
Small Outline Transistor
Lead Shape
Gull-wing
Pin Count
4
PCB
3
Tab
Tab
Package Length (mm)
6.5
Package Width (mm)
3.5
Package Height (mm)
1.6
Seated Plane Height (mm)
1.8(Max)
Pin Pitch (mm)
2.3
Package Material
Plastic
Mounting
Surface Mount
Jedec
TO-261AA
Configuration
Single Dual Drain
Channel Mode
Enhancement
Channel Type
P
Number of Elements per Chip
1
Process Technology
SIPMOS
Maximum Drain Source Voltage
240V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
0.2@Ta=35CA
Maximum Drain Source Resistance
20000@10VmOhm
Compliance
Cage Code
CG091
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2002/95/EC
Datasheet
Infineon Q62702-S653 Datasheet
Download the complete datasheet for Infineon Q62702-S653 to view detailed technical specifications.
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