P-channel MOSFET, 240V drain-source voltage, 0.2A continuous drain current. Features a SOT-223 (TO-261AA) surface-mount plastic package with gull-wing leads, 4 pins (3+tab), and a 2.3mm pin pitch. SIPMOS process technology enables enhancement mode operation with a maximum gate-source voltage of ±20V and 20000 mOhm drain-source resistance at 10V.
PackageSOT-223
MountingSurface Mount
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Technical Specifications
Infineon Q62702-S653 technical specifications.
General
| Basic Package Type | Lead-Frame SMT |
| Package Family Name | SOT |
| Package/Case | SOT-223 |
| Package Description | Small Outline Transistor |
| Lead Shape | Gull-wing |
| Pin Count | 4 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 6.5 |
| Package Width (mm) | 3.5 |
| Package Height (mm) | 1.6 |
| Seated Plane Height (mm) | 1.8(Max) |
| Pin Pitch (mm) | 2.3 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Jedec | TO-261AA |
| Configuration | Single Dual Drain |
| Channel Mode | Enhancement |
| Channel Type | P |
| Number of Elements per Chip | 1 |
| Process Technology | SIPMOS |
| Maximum Drain Source Voltage | 240V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 0.2@Ta=35CA |
| Maximum Drain Source Resistance | 20000@10VmOhm |
Compliance
| Cage Code | CG091 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2002/95/EC |
Datasheet
Infineon Q62702-S653 Datasheet
Download the complete datasheet for Infineon Q62702-S653 to view detailed technical specifications.
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