The SGP04N60XKSA1 is a 600V insulated gate bipolar transistor (IGBT) from Infineon, packaged in a TO-220 flange mount with a maximum collector current of 9.4A and maximum power dissipation of 50W. Operating temperature range is -55°C to 150°C. The device is lead-free and RoHS compliant, and is packaged in a rail/Tube format.
PackageTO-220
MountingThrough Hole
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Technical Specifications
Infineon SGP04N60XKSA1 technical specifications.
General
| Package/Case | TO-220 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2.4V |
| Halogen Free | Halogen Free |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Max Collector Current | 9.4A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 50W |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
Infineon SGP04N60XKSA1 Datasheet
Download the complete datasheet for Infineon SGP04N60XKSA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.