P-channel MOSFET featuring 8A continuous drain current and 30V drain-source voltage. Offers a low on-resistance of 0.02 ohms. This single-element silicon Metal-Oxide-Semiconductor Field-Effect Transistor is housed in an 8-terminal MS-012AA package.
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Technical Specifications
Infineon SI4435DYTRPBF technical specifications.
General
Number of Terminals
8
Terminal Position
DUAL
JEDEC Package Code
MS-012AA
Number of Elements
1
Compliance
RoHS
Yes
Eccn Code
EAR99
HTS Code
8541.29.00.95
REACH
Compliant
Military Spec
False
Datasheet
Infineon SI4435DYTRPBF Datasheet
Download the complete datasheet for Infineon SI4435DYTRPBF to view detailed technical specifications.
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