P-channel MOSFET featuring 8A continuous drain current and 30V drain-source voltage. Offers a low on-resistance of 0.02 ohms. This single-element silicon Metal-Oxide-Semiconductor Field-Effect Transistor is housed in an 8-terminal MS-012AA package.
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Technical Specifications
Infineon SI4435DYTRPBF technical specifications.
General
| Number of Terminals | 8 |
| Terminal Position | DUAL |
| JEDEC Package Code | MS-012AA |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| HTS Code | 8541.29.00.95 |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Infineon SI4435DYTRPBF Datasheet
Download the complete datasheet for Infineon SI4435DYTRPBF to view detailed technical specifications.
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