Surface mount bipolar junction transistor (BJT) offering NPN and PNP polarity. Features a 40V collector-emitter breakdown voltage and 200mA continuous collector current. With a 250MHz gain bandwidth product and a low collector-emitter saturation voltage of 400mV, this silicon transistor is designed for small signal applications. Housed in a compact SOT-363-6 package, it operates across a wide temperature range from -65°C to 150°C and is RoHS compliant.
PackageSOT-363-6
MountingSurface Mount
PolarityNPN, PNP
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Technical Specifications
Infineon SMBT3904PNH6327XTSA1 technical specifications.
General
| Package/Case | SOT-363-6 |
| Collector Base Voltage (VCBO) | 40V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector Emitter Saturation Voltage | 400mV |
| Collector-emitter Voltage-Max | 400mV |
| Continuous Collector Current | 200mA |
| Emitter Base Voltage (VEBO) | 6V |
| Gain Bandwidth Product | 250MHz |
| Halogen Free | Halogen Free |
| Height | 0.8mm |
| Lead Free | Lead Free |
| Length | 2mm |
| Max Breakdown Voltage | 40V |
| Max Collector Current | 200mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 250mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN, PNP |
| RoHS Compliant | Yes |
| Transition Frequency | 250MHz |
| Width | 1.25mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon SMBT3904PNH6327XTSA1 Datasheet
Download the complete datasheet for Infineon SMBT3904PNH6327XTSA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.