The SMBTA42E6327 is a surface mount NPN bipolar junction transistor with a collector-emitter breakdown voltage of 300V and a maximum collector current of 500mA. It has a maximum power dissipation of 360mW and operates over a temperature range of -65°C to 150°C. The transistor is packaged in a TO-236-3 package and is RoHS compliant. It has a transition frequency of 70MHz.
PackageTO-236-3
MountingSurface Mount
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Technical Specifications
Infineon SMBTA42E6327 technical specifications.
General
| Package/Case | TO-236-3 |
| Collector Emitter Breakdown Voltage | 300V |
| Collector-emitter Voltage-Max | 500mV |
| Max Breakdown Voltage | 300V |
| Max Collector Current | 500mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 360mW |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Cut Tape |
| RoHS Compliant | Yes |
| Transition Frequency | 70MHz |
Compliance
| RoHS | Compliant |
Datasheet
Infineon SMBTA42E6327 Datasheet
Download the complete datasheet for Infineon SMBTA42E6327 to view detailed technical specifications.
No datasheet is available for this part.