PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features 80V Collector-Emitter Breakdown Voltage (V(BR)CEO) and 500mA Max Collector Current (I(C)). Operates with a 100MHz Gain Bandwidth Product and 100MHz Transition Frequency. Housed in a compact SOT-23-3 surface mount package, this RoHS compliant component offers a wide operating temperature range from -65°C to 150°C. Maximum power dissipation is 330mW.
Frequency100MHz
PackageSOT-23-3
MountingSurface Mount
PolarityPNP
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Technical Specifications
Infineon SMBTA56E6433 technical specifications.
General
| Package/Case | SOT-23-3 |
| Collector Base Voltage (VCBO) | 80V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | 250mV |
| Collector Emitter Voltage (VCEO) | 80V |
| Collector-emitter Voltage-Max | 250mV |
| Emitter Base Voltage (VEBO) | 4V |
| Frequency | 100MHz |
| Gain Bandwidth Product | 100MHz |
| Height | 0.9mm |
| Length | 2.9mm |
| Max Breakdown Voltage | 80V |
| Max Collector Current | 500mA |
| Max Frequency | 100MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 330mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 330mW |
| RoHS Compliant | Yes |
| Transition Frequency | 100MHz |
| Width | 1.3mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon SMBTA56E6433 Datasheet
Download the complete datasheet for Infineon SMBTA56E6433 to view detailed technical specifications.
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