PNP silicon bipolar junction transistor in SOT-23 package. Features 300V collector-emitter breakdown voltage (V(BR)CEO) and 500mA continuous collector current (I(C)). Offers a maximum power dissipation of 360mW and a transition frequency of 50MHz. Operates within a temperature range of -65°C to 150°C. Surface mountable with lead-free and RoHS compliant construction.
Frequency50MHz
PackageSOT-23
Current Rating-500mA
MountingSurface Mount
Quick Jump:
Technical Specifications
Infineon SMBTA92E6327HTSA1 technical specifications.
General
| Package/Case | SOT-23 |
| Collector Base Voltage (VCBO) | 300V |
| Collector Emitter Breakdown Voltage | 300V |
| Collector Emitter Saturation Voltage | 500mV |
| Collector Emitter Voltage (VCEO) | 10V |
| Collector-emitter Voltage-Max | 500mV |
| Continuous Collector Current | 500mA |
| Current Rating | -500mA |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 50MHz |
| Halogen Free | Not Halogen Free |
| Height | 1.1mm |
| hFE Min | 40 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 300V |
| Max Collector Current | 500mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 360mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 360mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 50MHz |
| DC Rated Voltage | -300V |
Compliance
| RoHS | Compliant |
Datasheet
Infineon SMBTA92E6327HTSA1 Datasheet
Download the complete datasheet for Infineon SMBTA92E6327HTSA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
