N-channel JFET for surface mount applications, featuring a 60V drain-source breakdown voltage and 200mA continuous drain current. This silicon transistor offers a low on-resistance of 5 Ohms and operates within a -55°C to +150°C temperature range. Key switching characteristics include a 2.4ns turn-on delay and 3.6ns fall time, with 45pF input capacitance. Designed for automotive environments, this component is halogen-free, lead-free, and RoHS compliant.
PackageSOT-23
MountingSurface Mount
PolarityN-CHANNEL
Power360mW
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Technical Specifications
Infineon SN7002NH6327XTSA2 technical specifications.
General
Package/Case
SOT-23
Continuous Drain Current (ID)
200mA
Drain to Source Breakdown Voltage
60V
Drain to Source Resistance
5R
Drain to Source Voltage (Vdss)
60V
Fall Time
3.6ns
Gate to Source Voltage (Vgs)
20V
Halogen Free
Halogen Free
Input Capacitance
45pF
Lead Free
Lead Free
Max Dual Supply Voltage
60V
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
360mW
Mount
Surface Mount
Number of Elements
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
360mW
Radiation Hardening
No
Rds On Max
5R
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Series
Automotive, AEC-Q101, SIPMOS®
Turn-Off Delay Time
5.3ns
Turn-On Delay Time
2.4ns
Compliance
RoHS
Compliant
Datasheet
Infineon SN7002NH6327XTSA2 Datasheet
Download the complete datasheet for Infineon SN7002NH6327XTSA2 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.