
N-channel JFET for small signal applications, featuring a 60V drain-source breakdown voltage and 200mA continuous drain current. This surface-mount transistor offers a low drain-source on-resistance of 5 Ohms. Designed for operation across a wide temperature range (-55°C to 150°C), it boasts fast switching speeds with turn-on delay of 2.4ns and fall time of 3.2ns. The component is RoHS compliant and packaged in a SOT-23-3 plastic package.
Infineon SN7002NL6327 technical specifications.
| Package/Case | SOT-23-3 |
| Continuous Drain Current (ID) | 200mA |
| Current Rating | 200mA |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 5R |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 3.2ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 45pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 360mW |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 360mW |
| Rds On Max | 5R |
| RoHS Compliant | Yes |
| Series | SIPMOS® |
| Turn-Off Delay Time | 5.3ns |
| Turn-On Delay Time | 2.4ns |
| DC Rated Voltage | 60V |
| RoHS | Compliant |
Download the complete datasheet for Infineon SN7002NL6327 to view detailed technical specifications.
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