P-channel MOSFET, 60V drain-source voltage, 0.13A continuous drain current. Features a 3-pin SOT-23 (TO-236AA) package with gull-wing leads for surface mounting. Enhanced mode operation with a maximum gate-source voltage of ±20V. SIPMOS process technology ensures reliable performance.
Infineon SP 0610TE6327 technical specifications.
| Basic Package Type | Lead-Frame SMT |
| Package Family Name | SOT-23 |
| Package/Case | SOT-23 |
| Package Description | Small Outline Transistor |
| Lead Shape | Gull-wing |
| Pin Count | 3 |
| PCB | 3 |
| Package Length (mm) | 2.9 |
| Package Width (mm) | 1.3 |
| Package Height (mm) | 1(Max) |
| Seated Plane Height (mm) | 1 |
| Pin Pitch (mm) | 0.95 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Jedec | TO-236AA |
| Configuration | Single |
| Channel Mode | Enhancement |
| Channel Type | P |
| Number of Elements per Chip | 1 |
| Process Technology | SIPMOS |
| Maximum Drain Source Voltage | 60V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 0.13@Ta=36CA |
| Maximum Drain Source Resistance | 10000@10VmOhm |
| Cage Code | CG091 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2002/95/EC |
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