N-Channel Power MOSFET, 600V Vds, 4.5A continuous drain current, and 0.95 Ohm Rds On. Features include a 3V threshold voltage, 6ns turn-on delay, and 9.5ns fall time. This silicon, metal-oxide semiconductor FET is housed in a TO-220-3 package for through-hole mounting. It operates from -55°C to 150°C, offers 31W max power dissipation, and is RoHS and Halogen Free compliant.
PackageTO-220-3
MountingThrough Hole
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Technical Specifications
Infineon SPA04N60C3XKSA1 technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 4.5A |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 9.5ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 9.83mm |
| Input Capacitance | 490pF |
| Lead Free | Lead Free |
| Length | 10.65mm |
| Max Dual Supply Voltage | 600V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 31W |
| Mount | Through Hole |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Rds On Max | 950mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | CoolMOS™ |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 58.5ns |
| Turn-On Delay Time | 6ns |
| Width | 4.85mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon SPA04N60C3XKSA1 Datasheet
Download the complete datasheet for Infineon SPA04N60C3XKSA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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