N-Channel Power MOSFET featuring 650V drain-source breakdown voltage and 6.2A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low 750mΩ Rds On and 32W power dissipation. Designed for high-frequency switching applications with fast switching times, including 7ns turn-on and 10ns fall times. Packaged in a TO-220AB full pack, this component is RoHS and Halogen Free compliant.
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| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 6.2A |
| Current Rating | 6.2A |
| Drain to Source Breakdown Voltage | 650V |
| Drain to Source Resistance | 750mR |
| Drain to Source Voltage (Vdss) | 650V |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 620pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 32W |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 32W |
| Rds On Max | 750mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | CoolMOS™ |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 52ns |
| Turn-On Delay Time | 7ns |
| DC Rated Voltage | 650V |
| RoHS | Compliant |
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