N-Channel Power MOSFET featuring 800V drain-source voltage and 6A continuous drain current. This silicon Metal-Oxide Semiconductor FET offers a low 0.9 ohm Rds On and is housed in a TO-220-3 package. Key specifications include a 3V threshold voltage, 785pF input capacitance, and fast switching times with an 8ns fall time. Designed for high-power applications, it operates from -55°C to 150°C with a maximum power dissipation of 39W and is RoHS compliant.
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| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 6A |
| Current Rating | 6A |
| Drain to Source Voltage (Vdss) | 800V |
| Fall Time | 8ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 9.83mm |
| Input Capacitance | 785pF |
| Lead Free | Lead Free |
| Length | 10.65mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 39W |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Rds On Max | 900mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | CoolMOS™ |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 65ns |
| Turn-On Delay Time | 25ns |
| DC Rated Voltage | 800V |
| Width | 4.85mm |
| RoHS | Compliant |
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