SPA06N80C3

N-Channel Power MOSFET featuring 800V drain-source voltage and 6A continuous drain current. This silicon Metal-Oxide Semiconductor FET offers a low 0.9 ohm Rds On and is housed in a TO-220-3 package. Key specifications include a 3V threshold voltage, 785pF input capacitance, and fast switching times with an 8ns fall time. Designed for high-power applications, it operates from -55°C to 150°C with a maximum power dissipation of 39W and is RoHS compliant.