N-Channel Power MOSFET featuring 800V drain-source voltage (Vdss) and a 6A continuous drain current (Id). This silicon, metal-oxide semiconductor field-effect transistor offers a low on-state resistance of 780mΩ at a 10V gate-source voltage. Designed for high-voltage applications, it operates within a wide temperature range from -55°C to 150°C and boasts a typical turn-on delay time of 25ns. The component is housed in a TO-220AB package, is RoHS compliant, and lead-free.
Current Rating6A
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Technical Specifications
Infineon SPA06N80C3XKSA1 technical specifications.
General
| Current Rating | 6A |
| Drain to Source Resistance | 780mR |
| Drain to Source Voltage (Vdss) | 800V |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Lead Free | Lead Free |
| Max Dual Supply Voltage | 800V |
| Min Operating Temperature | -55°C |
| On-State Resistance | 900mR |
| Package Quantity | 500 |
| RoHS Compliant | Yes |
| Turn-On Delay Time | 25ns |
| DC Rated Voltage | 800V |
Compliance
| RoHS | Compliant |
Datasheet
Infineon SPA06N80C3XKSA1 Datasheet
Download the complete datasheet for Infineon SPA06N80C3XKSA1 to view detailed technical specifications.
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