N-Channel Power MOSFET featuring 650V drain-source breakdown voltage and 6.6A continuous drain current. This silicon, metal-oxide semiconductor field-effect transistor offers a low 700mΩ Rds On and 32W maximum power dissipation. Designed for efficient switching, it exhibits a 9ns fall time and 12ns turn-on delay. Packaged in a TO-220-3 configuration, this RoHS compliant component operates from -55°C to 150°C.
PackageTO-220-3
PolarityN-CHANNEL
Power32W
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Technical Specifications
Infineon SPA07N60CFD technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 6.6A |
| Drain to Source Breakdown Voltage | 650V |
| Drain to Source Resistance | 700mR |
| Drain to Source Voltage (Vdss) | 650V |
| Fall Time | 9ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 790pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 32W |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 32W |
| Rds On Max | 700mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | CoolMOS™ |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 36ns |
| Turn-On Delay Time | 12ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon SPA07N60CFD Datasheet
Download the complete datasheet for Infineon SPA07N60CFD to view detailed technical specifications.
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