
N-channel power MOSFET with 500V drain-source voltage and 7.6A continuous drain current. Features 600mΩ Rds(on) and 32W power dissipation. Operates from -55°C to 150°C, with 7ns fall time and 6ns turn-on delay. Through-hole mounting in a TO-220AB package. RoHS compliant and halogen-free.
Infineon SPA08N50C3 technical specifications.
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 7.6A |
| Drain to Source Breakdown Voltage | 560V |
| Drain to Source Resistance | 600mR |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 7ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 9.83mm |
| Input Capacitance | 750pF |
| Lead Free | Lead Free |
| Length | 10.65mm |
| Max Dual Supply Voltage | 500V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 32W |
| Mount | Through Hole |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 32W |
| Rds On Max | 600mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | CoolMOS™ |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 60ns |
| Turn-On Delay Time | 6ns |
| Width | 4.85mm |
| RoHS | Compliant |
Download the complete datasheet for Infineon SPA08N50C3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
