N-Channel Power MOSFET featuring 800V drain-source voltage and 8A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low on-resistance of 650mΩ at 10V. Designed for efficient switching, it exhibits a fall time of 7ns and turn-off delay of 65ns. Available in TO-220AB and TO-220FP packages, this RoHS compliant component operates from -55°C to 150°C with a maximum power dissipation of 40W.
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| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 8A |
| Current Rating | 8A |
| Drain to Source Voltage (Vdss) | 800V |
| Fall Time | 7ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 16.15mm |
| Input Capacitance | 1.1nF |
| Lead Free | Lead Free |
| Length | 10.65mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 40W |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Rds On Max | 650mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | CoolMOS™ |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 65ns |
| Turn-On Delay Time | 25ns |
| DC Rated Voltage | 800V |
| Width | 4.85mm |
| RoHS | Compliant |
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